Infineon IPP110N20NAAKSA1 N-channel MOSFET, 88 A, 200 V OptiMOS 3, 3-Pin TO-220
Product Information
Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Width:
4.57mm
Length:
10.36mm
Maximum Drain Source Resistance:
11 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
88 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 88 A 200 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP110N20NAAKSA1. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.36mm. It provides up to 11 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 88 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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