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This is N-channel MOSFET 4.8 A 550 V CoolMOS CE 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IPN50R1K4CEATMA1. It has a maximum of 550 v drain source voltage. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 5 w maximum power dissipation. The product coolmos™ ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 1.4 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. While 4.8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.5v. Its forward diode voltage is 0.83v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
For more information please check the datasheets.
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£ 0.000
