Infineon IPD90P03P404ATMA1 P-channel MOSFET, 90 A, 30 V OptiMOS P, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
137 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-20 V, +20 V
Channel Type:
P
Maximum Drain Source Resistance:
3.6 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
90 A
Forward Diode Voltage:
1.3V
Transistor Material:
Si
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is P-channel MOSFET 90 A 30 V OptiMOS P 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD90P03P404ATMA1. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 100 nc @ 10 v. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 137 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. It provides up to 3.6 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 90 a of maximum continuous drain current. Its forward diode voltage is 1.3v . The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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