Infineon IPD80R4K5P7ATMA1 N-channel MOSFET, 1.5 A, 800 V CoolMOS P7, 3-Pin DPAK

The Infineon IPD80R4K5P7ATMA1 is a rugged, high-voltage N‑channel device designed for UK and international power electronics. Built on advanced CoolMOS P7 technology, this surface-mount MOSFET offers a robust 800 V drain-source rating with 1.5 A continuous current capability in a compact PG‑TO252‑3 (DPAK) package. It delivers efficient switching with a low gate charge of just 4 nC and maintains reliable operation across a wide ±20 V gate tolerance and −55 °C to +150 °C temperature range.

Why Should You Buy the Infineon N-channel MOSFET, 3-Pin DPAK?

The IPD80R4K5P7ATMA1 offers superior high-voltage handling and compact design, perfect for tight PCB layouts. Its CoolMOS P7 architecture ensures efficient switching, low thermal stress, and high reliability, reducing board footprint and enhancing durability in demanding UK environments.

Product Core Features and Benefits

• High voltage capability
• Compact surface-mount DPAK package
• Low gate charge (4 nC)
• Wide gate tolerance (±20 V) & wide temperature range (−55 °C to +150 °C)
• 1.5 A continuous current rating

Usage Information

• Power conversion in AC-DC and DC-DC converters
• Industrial inverters and motor drive circuits
• Switching components in renewable energy systems (e.g. solar inverters)
• High-voltage power supplies and industrial control systems
• Compact, high-density electronic drivers and protection circuits

For more information please check the datasheets.