Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
17 A
Width:
6.22mm
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
280 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
36 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF @ 500 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
101 W
Series:
CoolMOS P7
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.41mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
