Infineon IPD80R1K4P7ATMA1 N-channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK

Infineon

Product Information

Forward Voltage Vf:
0.9V
Width:
6.22 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
4A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.4Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
800V
Channel Type:
Type N
Length:
6.73mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
32W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
CoolMOS P7
Height:
2.41mm
Minimum Operating Temperature:
-55°C
RoHs Compliant
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This is N-channel MOSFET 4 A 800 V CoolMOS P7 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R1K4P7ATMA1. Furthermore, the product is 6.22 mm wide. The product complies with automotive standard - no. The package is a sort of to-252. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. It has a surface type mount . The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55°c.

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IPD80R1K4P7, MOSFET 800V CoolMOS P7 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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