Infineon IPD60R800CEAUMA1 N-channel MOSFET, 8.4 A, 650 V CoolMOS CE, 3-Pin DPAK
Product Information
Maximum Continuous Drain Current:
8.4 A
Width:
6.22mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.2 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
74 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.41mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
800 mΩ
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This is N-channel MOSFET 8.4 A 650 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD60R800CEAUMA1. While 8.4 a of maximum continuous drain current. Furthermore, the product is 6.22mm wide. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 74 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.9v . It provides up to 800 mω maximum drain source resistance.
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