Infineon IPD50R380CEAUMA1 N-channel MOSFET, 14.1 A, 550 V CoolMOS CE, 3-Pin DPAK

Infineon

Product Information

Maximum Drain Source Voltage:
550 V
Typical Gate Charge @ Vgs:
24.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
98 W
Series:
CoolMOS™ CE
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
2.41mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
380 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
14.1 A
Minimum Gate Threshold Voltage:
2.5V
Forward Diode Voltage:
0.85V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
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This is N-channel MOSFET 14.1 A 550 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50R380CEAUMA1. It has a maximum of 550 v drain source voltage. With a typical gate charge at Vgs includes 24.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 98 w maximum power dissipation. The product coolmos™ ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 380 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 14.1 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.5v. Its forward diode voltage is 0.85v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.

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IPD50R380CE, MOSFET 500V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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