Infineon IPD50R380CEATMA1 N-channel MOSFET, 9.9 A, 550 V CoolMOS CE, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
550 V
Typical Gate Charge @ Vgs:
24.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
73 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.41mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
380 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Forward Diode Voltage:
0.85V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 9.9 A 550 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50R380CEATMA1. It has a maximum of 550 v drain source voltage. With a typical gate charge at Vgs includes 24.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 73 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 380 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.85v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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