Infineon IPD50N04S408ATMA1 N-channel MOSFET, 50 A, 40 V OptiMOS T2, 3-Pin DPAK

Infineon

Product Information

Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
46W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
40V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
17.2nC
Series:
OptiMOS-T2
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Height:
2.3mm
Width:
6.22 mm
Length:
6.5mm
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
7.9mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
50A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
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This is N-channel MOSFET 50 A 40 V OptiMOS T2 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50N04S408ATMA1. The product complies with automotive standard - aec-q101. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product optimos-t2, is a highly preferred choice for users. In addition, the height is 2.3mm. Furthermore, the product is 6.22 mm wide. Its accurate length is 6.5mm. The package is a sort of to-252. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a surface type mount .

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IPD50N04S4-08 OptiMOS Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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