Infineon IPB65R045C7ATMA1 N-channel MOSFET, 46 A, 700 V CoolMOS C7, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
46 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Maximum Drain Source Resistance:
45 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
93 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
227 W
Series:
CoolMOS C7
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
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This is N-channel MOSFET 46 A 700 V CoolMOS C7 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R045C7ATMA1. While 46 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. It provides up to 45 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 93 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 227 w maximum power dissipation. The product coolmos c7, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v .
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