Infineon IPB60R099C6ATMA1 N-channel MOSFET, 38 A, 600 V CoolMOS C6, 3-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
119 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
278 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Width:
4.57mm
Length:
10.31mm
Maximum Drain Source Resistance:
90 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
38 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 38 A 600 V CoolMOS C6 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB60R099C6ATMA1. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 119 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 278 w maximum power dissipation. The product coolmos c6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.45mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.31mm. It provides up to 90 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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