Infineon IPB180N10S402ATMA1 N-channel MOSFET, 180 A, 100 V IPB180N10S4-02, 7 + Tab-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
180 A
Width:
10.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
156 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
7 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
IPB180N10S4-02
Maximum Gate Source Voltage:
20 V
Height:
4.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 180 A 100 V IPB180N10S4-02 7 + Tab-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB180N10S402ATMA1. While 180 a of maximum continuous drain current. Furthermore, the product is 10.25mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 156 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 7 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. The product ipb180n10s4-02, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.5 mω maximum drain source resistance.
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