Infineon IPB120P04P4L03ATMA1 P-channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK

Infineon

Product Information

Automotive Standard:
AEC-Q
Maximum Power Dissipation Pd:
136W
Product Type:
Power Transistor
Maximum Drain Source Voltage Vds:
40V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
180nC
Series:
OptiMOS P
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Height:
4.4mm
Width:
9.25 mm
Length:
10mm
Package Type:
TO-263
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
5.2mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
120A
Channel Type:
Type P
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
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This is P-channel MOSFET 120 A 40 V OptiMOS P 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB120P04P4L03ATMA1. The product complies with automotive standard - aec-q. power transistor is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product optimos p, is a highly preferred choice for users. In addition, the height is 4.4mm. Furthermore, the product is 9.25 mm wide. Its accurate length is 10mm. The package is a sort of to-263. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a surface type mount .

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IPB120P04P4L-03, IPI120P04P4L-03, IPP120P04P4L-03 Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Automotive_MOSFETs_Product_Brochure(Technical Reference)

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