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The Infineon IPB083N10N3GATMA1 is a high-performance N-channel MOSFET designed to meet the demands of today's fast-switching and high-efficiency power applications. This transistor delivers excellent switching performance, low on-resistance, and high-power density. Housed in a compact 3-pin D²PAK surface-mount package, it is ideal for space-constrained applications without sacrificing thermal efficiency or reliability. This Infineon MOSFET provides a robust, energy-efficient solution trusted by engineers in the UK.
For more information please check the datasheets.
I ordered MOSFETs (ET16793124/IPB083N10N3GATMA1) from EnrgTech, and I couldn’t be happier. The product quality is outstanding, and they were delivered ahead of schedule. The customer care team was attentive, and they made sure my purchase went smoothly. EnrgTech’s website is easy to use, and I’ll definitely return for future component needs.
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