Infineon IPB083N10N3GATMA1, N-channel MOSFET, 80 A, 100 V OptiMOS 3, 3-Pin D2PAK, Surface Mount

IPB083N10N3GATMA1 Infineon , N-channel MOSFET, 80 A, 100 V OptiMOS 3, 3-Pin D2PAK, Surface Mount
IPB083N10N3GATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
15.1 mΩ
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The Infineon IPB083N10N3GATMA1 is a high-performance N-channel MOSFET designed to meet the demands of today's fast-switching and high-efficiency power applications. This transistor delivers excellent switching performance, low on-resistance, and high-power density. Housed in a compact 3-pin D²PAK surface-mount package, it is ideal for space-constrained applications without sacrificing thermal efficiency or reliability. This Infineon MOSFET provides a robust, energy-efficient solution trusted by engineers in the UK.

Salient Features and Benefits of Buying the Infineon IPB083N10N3GATMA1, N-channel MOSFET, 3-Pin D2PAK, Surface Mount

  • 80 a continuous drain current
  • 100v drain-source voltage
  • Optimos 3 technology
  • 3-pin d²pak package
  • Fast switching capability
  • Increased energy efficiency
  • Compact power design
  • Reliable in harsh environments
  • Lower system costs

Usage Information of the N-channel MOSFET, Surface Mount

  • Automotive ECU and powertrain systems
  • DC-DC converters and power management units
  • Industrial motor drives and servo controls
  • Solar inverters and UPS systems
  • Battery management and high-efficiency switching regulators

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IPP086N10N3 G, IPI086N10N3 G, IPB083N10N3 G, IPD082N10N3 G, OptiMOS3 Power MOSFET Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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