Infineon IPB011N04NGATMA1 N-channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
188 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Width:
9.45mm
Length:
10.31mm
Maximum Drain Source Resistance:
1.1 mΩ
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
7
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 180 A 40 V OptiMOS 3 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB011N04NGATMA1. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 188 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. It provides up to 1.1 mω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 7 pins. The product offers single transistor configuration.
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