Infineon IPB010N06NATMA1 N-channel MOSFET, 180 A, 60 V OptiMOS 5, 7-Pin D2PAK

IPB010N06NATMA1 Infineon  N-channel MOSFET, 180 A, 60 V OptiMOS 5, 7-Pin D2PAK
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
208 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS™ 5
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Width:
4.57mm
Length:
10.31mm
Maximum Drain Source Resistance:
1.5 mΩ
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Forward Diode Voltage:
4.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
7
Transistor Configuration:
Single
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This is N-channel MOSFET 180 A 60 V OptiMOS 5 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB010N06NATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 208 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos™ 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.45mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.31mm. It provides up to 1.5 mω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 4.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 7 pins. The product offers single transistor configuration.

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IPB010N06N OptiMOS 3 Power Transistor(Technical Reference)

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