Infineon IPA65R280E6XKSA1 N-channel MOSFET, 13.8 A, 700 V CoolMOS E6, 3-Pin TO-220FP
Product Information
Maximum Continuous Drain Current:
13.8 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
32 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.15mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
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Yes. We ship IPA65R280E6XKSA1 Internationally to many countries around the world.
This is N-channel MOSFET 13.8 A 700 V CoolMOS E6 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA65R280E6XKSA1. While 13.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 32 w maximum power dissipation. The product coolmos e6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 280 mω maximum drain source resistance.
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