Infineon IPA60R385CPXKSA1 N-channel MOSFET, 9 A, 600 V CoolMOS CP, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
31 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
385 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPA60R385CPXKSA1 N-channel MOSFET, 9 A, 600 V CoolMOS CP, 3-Pin TO-220. You can also check on our website or by contacting our customer support team for further order details on Infineon IPA60R385CPXKSA1 N-channel MOSFET, 9 A, 600 V CoolMOS CP, 3-Pin TO-220.
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Yes. We ship IPA60R385CPXKSA1 Internationally to many countries around the world.
This is N-channel MOSFET 9 A 600 V CoolMOS CP 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPA60R385CPXKSA1. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 31 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 385 mω maximum drain source resistance.
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