Infineon IPA086N10N3GXKSA1 N-channel MOSFET, 45 A, 100 V OptiMOS 3, 3-Pin TO-220FP
Product Information
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
37.5 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
15.4 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPA086N10N3GXKSA1 N-channel MOSFET, 45 A, 100 V OptiMOS 3, 3-Pin TO-220FP. You can also check on our website or by contacting our customer support team for further order details on Infineon IPA086N10N3GXKSA1 N-channel MOSFET, 45 A, 100 V OptiMOS 3, 3-Pin TO-220FP.
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Yes. We ship IPA086N10N3GXKSA1 Internationally to many countries around the world.
This is N-channel MOSFET 45 A 100 V OptiMOS 3 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA086N10N3GXKSA1. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 42 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 37.5 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 15.4 mω maximum drain source resistance.
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