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Infineon IPA030N10N3GXKSA1 N-channel MOSFET, 79 A, 100 V OptiMOS 3, 3-Pin TO-220FP

IPA030N10N3GXKSA1 Infineon  N-channel MOSFET, 79 A, 100 V OptiMOS 3, 3-Pin TO-220FP
IPA030N10N3GXKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
155 nC
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
41 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.8 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 79 A 100 V OptiMOS 3 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA030N10N3GXKSA1. While 79 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 155 nc. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 41 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4.8 mω maximum drain source resistance.

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IPA030N10N3 G, OptiMOS3 Power MOSFET Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You can order Infineon brand products with IPA030N10N3GXKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPA030N10N3GXKSA1 N-channel MOSFET, 79 A, 100 V OptiMOS 3, 3-Pin TO-220FP. You can also check on our website or by contacting our customer support team for further order details on Infineon IPA030N10N3GXKSA1 N-channel MOSFET, 79 A, 100 V OptiMOS 3, 3-Pin TO-220FP.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793039 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793039.
Yes. We ship IPA030N10N3GXKSA1 Internationally to many countries around the world.