Infineon BTS282ZE3180AATMA2 N-channel MOSFET, 80 A, 49 V TEMPFET, 7+Tab-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
49 V
Maximum Gate Threshold Voltage:
2V
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
155 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
TEMPFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.4mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
9.5 mΩ
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This is N-channel MOSFET 80 A 49 V TEMPFET 7+Tab-Pin D2PAK manufactured by Infineon. The manufacturer part number is BTS282ZE3180AATMA2. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.25mm wide. The product offers single transistor configuration. It has a maximum of 49 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of d2pak-7. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 155 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. The product tempfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 1.4v . It provides up to 9.5 mω maximum drain source resistance.
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