Infineon BSZ086P03NS3EGATMA1 P-channel MOSFET, 40 A, 30 V OptiMOS P, 8-Pin TSDSON

BSZ086P03NS3EGATMA1 Infineon  P-channel MOSFET, 40 A, 30 V OptiMOS P, 8-Pin TSDSON
Infineon

Product Information

Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.9V
Package Type:
TSDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43.2 nC @ 10 V
Channel Type:
P
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
69 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.4 mΩ
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This is P-channel MOSFET 40 A 30 V OptiMOS P 8-Pin TSDSON manufactured by Infineon. The manufacturer part number is BSZ086P03NS3EGATMA1. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.9v of maximum gate threshold voltage. The package is a sort of tsdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 43.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 69 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 13.4 mω maximum drain source resistance.

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BSZ086P03NS3E G, OptiMOS P3 Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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