Infineon BSS87H6327XTSA1 N-channel MOSFET, 260 mA, 240 V SIPMOS, 3-Pin SOT-89
Product Information
Maximum Continuous Drain Current:
260 mA
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
240 V
Maximum Gate Threshold Voltage:
1.8V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.7 nC @ 10 V
Channel Type:
N
Length:
4.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.5 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 260 mA 240 V SIPMOS 3-Pin SOT-89 manufactured by Infineon. The manufacturer part number is BSS87H6327XTSA1. While 260 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 240 v drain source voltage. The product carries 1.8v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.5 ω maximum drain source resistance.
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