Infineon BSR316PH6327XTSA1 P-channel MOSFET, 360 mA, 100 V BSR316P, 3-Pin SC-59

BSR316PH6327XTSA1 Infineon  P-channel MOSFET, 360 mA, 100 V BSR316P, 3-Pin SC-59
Infineon

Product Information

Maximum Continuous Drain Current:
360 mA
Width:
1.6mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SC-59
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.3 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
SIPMOS®
Maximum Gate Source Voltage:
20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
2.2 Ω
RoHs Compliant
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This is P-channel MOSFET 360 mA 100 V BSR316P 3-Pin SC-59 manufactured by Infineon. The manufacturer part number is BSR316PH6327XTSA1. While 360 ma of maximum continuous drain current. Furthermore, the product is 1.6mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sc-59. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 2.2 ω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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