Infineon BSP89H6327XTSA1 N-channel MOSFET, 350 mA, 240 V SIPMOS, 3+Tab-Pin SOT-223

Enrgtech Part No: ET16792561
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Manufacturer Part No:
BSP89H6327XTSA1
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Manufacturer: Infineon

BSP89H6327XTSA1 Infineon N-channel MOSFET, 350 mA, 240 V SIPMOS, 3+Tab-Pin SOT-223

Product Information

Automotive Standard:

AEC-Q101

Maximum Power Dissipation Pd:

1.8W

Product Type:

MOSFET

Maximum Drain Source Voltage Vds:

240V

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

4.3nC

Series:

SIPMOS

Maximum Gate Source Voltage Vgs:

20 V

Forward Voltage Vf:

1.1V

Height:

1.6mm

Width:

3.5 mm

Length:

6.5mm

Checking for live stock

Engineered to deliver reliable performance in low-power switching tasks, the BSP89H6327XTSA1 N-Channel MOSFET from Infineon is a trusted solution for UK engineers and electronic designers. Packaged in a compact SOT-223 case, it offers efficient thermal handling, fast switching, and enhanced load control. Its low gate threshold and high-speed operation make it ideal for portable and space-sensitive applications. This MOSFET offers the balance of performance, efficiency, and size that today’s systems demand.

Notable Advantages of Buying the Infineon N-channel MOSFET, 3+Tab-Pin SOT-223

High-speed switching for enhanced performance.
Low RDS(on) minimises power loss and heat.
SOT-223 footprint for space-constrained layouts.
Suitable for logic-level gate drives.
Improved energy efficiency in compact systems.

Wide Application Range

Signal switching in low-voltage systems
DC-DC converters and voltage regulators
Portable electronics and wearable devices
LED lighting control circuits
Smart home and IoT hardware designs

BSP 89 SIPMOS ® Small-Signal Transistor Data Sheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.

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