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This is Dual N-channel MOSFET 2.6 A 60 V SIPMOS 8-Pin SOIC manufactured by Infineon. The manufacturer part number is BSO615NGHUMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 150 mω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.6 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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