Infineon BSO201SPHXUMA1 P-channel MOSFET, 14.9 A, 20 V OptiMOS P, 8-Pin DSO
Product Information
Maximum Continuous Drain Current:
14.9 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
66 nC @ 4.5 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.65mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12.9 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BSO201SPHXUMA1 Internationally to many countries around the world.
This is P-channel MOSFET 14.9 A 20 V OptiMOS P 8-Pin DSO manufactured by Infineon. The manufacturer part number is BSO201SPHXUMA1. While 14.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 66 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.65mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12.9 mω maximum drain source resistance.
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