Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.6 V, 1.2V
Package Type:
TSOP-6
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.7 V, 1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.73 nC @ 4.5 V, 3 nC @ 5 V
Channel Type:
N, P
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
250 mΩ, 280 mΩ
This is Dual N/P-channel MOSFET 1.5 A 20 V OptiMOS 6-Pin TSOP manufactured by Infineon. The manufacturer part number is BSL215CH6327XTSA1. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.6 v, 1.2v of maximum gate threshold voltage. The package is a sort of tsop-6. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.7 v, 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.73 nc @ 4.5 v, 3 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 250 mω, 280 mω maximum drain source resistance.
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