Infineon BSC265N10LSFGATMA1 N-channel MOSFET, 40 A, 100 V OptiMOS 2, 8-Pin PG-TDSON
Product Information
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
PG-TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
N
Length:
5.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
36 mΩ
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This is N-channel MOSFET 40 A 100 V OptiMOS 2 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is BSC265N10LSFGATMA1. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of pg-tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 78 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 36 mω maximum drain source resistance.
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