Infineon BSC047N08NS3GATMA1 N-channel MOSFET, 100 A, 80 V OptiMOS 3, 8-Pin TDSON
Product Information
Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
52 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Width:
5.35mm
Length:
6.1mm
Maximum Drain Source Resistance:
8.9 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-channel MOSFET 100 A 80 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC047N08NS3GATMA1. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 52 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. It provides up to 8.9 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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