Infineon BSC046N02KSGAUMA1 N-channel MOSFET, 80 A, 20 V OptiMOS 2, 8-Pin TDSON
Product Information
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 4.5 V
Channel Type:
N
Length:
6.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.8 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.9 mΩ
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This is N-channel MOSFET 80 A 20 V OptiMOS 2 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC046N02KSGAUMA1. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.35mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.8 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5.9 mω maximum drain source resistance.
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