Infineon BSC019N04NSGATMA1 N-channel MOSFET, 100 A, 40 V OptiMOS 3, 8-Pin PG-TDSON
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Length:
6.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.9 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship BSC019N04NSGATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 100 A 40 V OptiMOS 3 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is BSC019N04NSGATMA1. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.35mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 125 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.9 mω maximum drain source resistance.
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