Infineon BF998E6327HTSA1 N-channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143
Product Information
Maximum Drain Source Voltage:
12 V
Maximum Continuous Drain Current:
30 mA
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-2.5 V, -2 V
Maximum Gate Threshold Voltage:
2.5V
Channel Type:
N
Width:
1mm
Length:
2.9mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-143
Number of Elements per Chip:
1
Typical Power Gain:
28 dB
Transistor Material:
Si
Height:
1.3mm
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BF998E6327HTSA1 N-channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143. You can also check on our website or by contacting our customer support team for further order details on Infineon BF998E6327HTSA1 N-channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143.
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Yes. We ship BF998E6327HTSA1 Internationally to many countries around the world.
This is N-channel MOSFET Tetrode 30 mA 12 V 4-Pin SOT-143 manufactured by Infineon. The manufacturer part number is BF998E6327HTSA1. It has a maximum of 12 v drain source voltage. While 30 ma of maximum continuous drain current. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -2.5 v, -2 v. The product carries 2.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1mm wide. Its accurate length is 2.9mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-143. It consists of 1 elements per chip. It has about 28 db typical power gain . The transistor is manufactured from highly durable si material. In addition, the height is 1.3mm. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.
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