Renesas 2SK1339-E N-channel MOSFET, 3 A, 900 V, 3+Tab-Pin TO-3P
Product Information
Maximum Drain Source Voltage:
900 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
19.9mm
Width:
4.8mm
Length:
15.6mm
Maximum Drain Source Resistance:
7 Ω
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship 2SK1339-E Internationally to many countries around the world.
This is Renesas N-channel MOSFET 3 A 900 V 3+Tab-Pin TO-3P manufactured by Renesas Electronics. The manufacturer part number is 2SK1339-E. It has a maximum of 900 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 19.9mm. Furthermore, the product is 4.8mm wide. Its accurate length is 15.6mm. It provides up to 7 ω maximum drain source resistance. The package is a sort of to-3p. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.
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