Taiwan Semi TSM7N90CZ C0G N-channel MOSFET, 7 A, 900 V, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
7 A
Width:
4.19mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Maximum Gate Source Voltage:
±30 V
Height:
14.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
1.9 Ω
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This is Taiwan Semi N-channel MOSFET 7 A 900 V 3-Pin TO-220 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM7N90CZ C0G. While 7 a of maximum continuous drain current. Furthermore, the product is 4.19mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 14.25mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 1.9 ω maximum drain source resistance.
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