Maximum Continuous Drain Current:
9 A
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 6 V, 37 nC @ 10 V
Channel Type:
N
Length:
4.85mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12.5 W
Maximum Gate Source Voltage:
±20 V
Height:
1.55mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
80 mΩ
This is Taiwan Semi N-channel MOSFET 9 A 150 V 8-Pin SOP manufactured by Taiwan Semiconductor. The manufacturer part number is TSM650N15CS RLG. While 9 a of maximum continuous drain current. Furthermore, the product is 3.9mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of sop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24 nc @ 6 v, 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.85mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 12.5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.55mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 80 mω maximum drain source resistance.
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