Category:
Power MOSFET
Dimensions:
10 x 4.6 x 15mm
Maximum Continuous Drain Current:
11 A
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
ITO-220S
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1040 pF @ 100 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
70 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
33 W
Maximum Gate Source Voltage:
±30 V
Height:
15mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
380 mΩ
