This is Taiwan Semi N-channel MOSFET 11 A 30 V 8-Pin SOP manufactured by Taiwan Semiconductor. The manufacturer part number is TSM4425CS RLG. While 11 a of maximum continuous drain current. Furthermore, the product is 3.9mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of sop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.85mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.37mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 19 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is Taiwan Semi N-channel MOSFET 11 A 30 V 8-Pin SOP manufactured by Taiwan Semiconductor. The manufacturer part number is TSM4425CS RLG. While 11 a of maximum continuous drain current. Furthermore, the product is 3.9mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of sop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.85mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.37mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 19 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.