Taiwan Semi TSM2N100CP ROG N-channel MOSFET, 1.85 A, 1000 V, 3 + Tab-Pin DPAK
Product Information
Maximum Continuous Drain Current:
1.85 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
77 W
Maximum Gate Source Voltage:
±30 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
8.5 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Taiwan Semi TSM2N100CP ROG N-channel MOSFET, 1.85 A, 1000 V, 3 + Tab-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Taiwan Semi TSM2N100CP ROG N-channel MOSFET, 1.85 A, 1000 V, 3 + Tab-Pin DPAK.
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Yes. We ship TSM2N100CP ROG Internationally to many countries around the world.
This is Taiwan Semi N-channel MOSFET 1.85 A 1000 V 3 + Tab-Pin DPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM2N100CP ROG. While 1.85 a of maximum continuous drain current. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 1000 v drain source voltage. The product carries 5.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 77 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 8.5 ω maximum drain source resistance.
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