Taiwan Semi TSM10NC60CF C0G N-channel MOSFET, 10 A, 650 V, 3-Pin ITO-220
Product Information
Maximum Continuous Drain Current:
10 A
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
ITO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
45 W
Maximum Gate Source Voltage:
±30 V
Height:
15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
750 mΩ
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This is Taiwan Semi N-channel MOSFET 10 A 650 V 3-Pin ITO-220 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM10NC60CF C0G. While 10 a of maximum continuous drain current. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ito-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 750 mω maximum drain source resistance.
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