Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Diodes Inc DMTH6016LSD-13 Dual N-channel MOSFET, 7.6 A, 60 V DMT, 8-Pin SOIC

DMTH6016LSD-13 Diodes Inc  Dual N-channel MOSFET, 7.6 A, 60 V DMT, 8-Pin SOIC
DMTH6016LSD-13
DiodesZetex

Product Information

Maximum Continuous Drain Current:
7.6 A
Width:
3.95mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 @ 10 V nC
Channel Type:
N
Length:
4.95mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
DMT
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
28 mΩ
RoHs Compliant
Checking for live stock

This is Diodes Inc Dual N-channel MOSFET 7.6 A 60 V DMT 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMTH6016LSD-13. While 7.6 a of maximum continuous drain current. Furthermore, the product is 3.95mm wide. The product complies with automotive standard - aec-q101. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 17 @ 10 v nc. The product is available in [Cannel Type] channel. Its accurate length is 4.95mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.4 w maximum power dissipation. The product dmt, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 28 mω maximum drain source resistance.

pdf icon
DMTH6016LSD, 60V +175°C Dual N-Channel Enhancement Mode MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search DMTH6016LSD-13 on website for other similar products.
We accept all major payment methods for all products including ET16759722. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with DMTH6016LSD-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMTH6016LSD-13 Dual N-channel MOSFET, 7.6 A, 60 V DMT, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMTH6016LSD-13 Dual N-channel MOSFET, 7.6 A, 60 V DMT, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16759722 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16759722.
Yes. We ship DMTH6016LSD-13 Internationally to many countries around the world.