Diodes Inc DMT8012LFG-7 N-channel MOSFET, 35 A, 80 V, 8-Pin POWERDI3333
Product Information
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
3.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
3V
Package Type:
POWERDI3333
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Length:
3.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
22 mΩ
Checking for live stock
FAQs
Yes. You can also search DMT8012LFG-7 on website for other similar products.
We accept all major payment methods for all products including ET16759719. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with DMT8012LFG-7 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMT8012LFG-7 N-channel MOSFET, 35 A, 80 V, 8-Pin POWERDI3333. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMT8012LFG-7 N-channel MOSFET, 35 A, 80 V, 8-Pin POWERDI3333.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16759719 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16759719.
Yes. We ship DMT8012LFG-7 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 35 A 80 V 8-Pin POWERDI3333 manufactured by DiodesZetex. The manufacturer part number is DMT8012LFG-7. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.35mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of powerdi3333. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 30 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 22 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.