Maximum Continuous Drain Current:
9.3 A, 9.6 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
35 V
Maximum Gate Threshold Voltage:
3V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.7 nC @ 10 V, 19.2 nC @ 10 V
Channel Type:
N, P
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
8.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
65 mΩ
This is Diodes Inc Dual N/P-channel MOSFET 9.3 A 9.6 A 35 V 3-Pin DPAK manufactured by DiodesZetex. The manufacturer part number is DMG4511SK4-13. While 9.3 a, 9.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers isolated transistor configuration. It has a maximum of 35 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18.7 nc @ 10 v, 19.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 8.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 65 mω maximum drain source resistance.
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