ON Semiconductor NVD5865NLT4G N-channel MOSFET, 38 A, 60 V, 3-Pin DPAK
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
71 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
19 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
38 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NVD586
Detailed Description:
N-Channel 60V 10A (Ta), 46A (Tc) 3.1W (Ta), 71W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 19A, 10V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
3.1W (Ta), 71W (Tc)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 46A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is N-channel MOSFET 38 A 60 V 3-Pin DPAK manufactured by ON Semiconductor. The manufacturer part number is NVD5865NLT4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 71 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 19 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: nvd586. It features n-channel 60v 10a (ta), 46a (tc) 3.1w (ta), 71w (tc) surface mount dpak. The product's input capacitance at maximum includes 1400pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 29nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 19a, 10v. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 3.1w (ta), 71w (tc). The continuous current drain at 25°C is 10a (ta), 46a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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