ON Semiconductor NTR1P02LT3G P-channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
3.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.25V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
350 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is P-channel MOSFET 1.3 A 20 V 3-Pin SOT-23 manufactured by ON Semiconductor. The manufacturer part number is NTR1P02LT3G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 3.1 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.25v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 350 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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