Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
39 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
113.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
3 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
191 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS4833
Gate Charge (Qg) (Max) @ Vgs:
88nC @ 11.5V
Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5600pF @ 12V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 156A (Tc)
Customer Reference:
Power Dissipation (Max):
910mW (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
This is N-channel MOSFET 191 A 30 V 8-Pin SOIC manufactured by ON Semiconductor. The manufacturer part number is NTMFS4833NT3G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 39 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 113.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 3 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 191 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 30v 16a (ta), 156a (tc) 910mw (ta), 125w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs4833. The maximum gate charge and given voltages include 88nc @ 11.5v. It has a maximum Rds On and voltage of 2mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 5600pf @ 12v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 16a (ta), 156a (tc). The product carries maximum power dissipation 910mw (ta), 125w (tc). This product use mosfet (metal oxide) technology.
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