ON Semiconductor FQA7N80C_F109 N-channel MOSFET, 7 A, 800 V QFET, 3-Pin TO-3PN
Product Information
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
198 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
18.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.9 Ω
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship FQA7N80C_F109 Internationally to many countries around the world.
This is N-channel MOSFET 7 A 800 V QFET 3-Pin TO-3PN manufactured by ON Semiconductor. The manufacturer part number is FQA7N80C_F109. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 27 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 198 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 18.9mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.9 ω maximum drain source resistance.
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