Vishay SUD50P06-15-GE3 P-channel MOSFET, 50 A, 60 V, 3-Pin DPAK

SUD50P06-15-GE3 Vishay  P-channel MOSFET, 50 A, 60 V, 3-Pin DPAK
Vishay

Product Information

Maximum Continuous Drain Current:
50 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
-3V
Package Type:
TO-252AA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
-1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
P
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
113 W
Maximum Gate Source Voltage:
±20 V
Height:
2.38mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
-1.6V
Maximum Drain Source Resistance:
28 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 50 A 60 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SUD50P06-15-GE3. While 50 a of maximum continuous drain current. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries -3v of maximum gate threshold voltage. The package is a sort of to-252aa. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes -1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 113 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is -1.6v . It provides up to 28 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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