This is P-channel MOSFET 50 A 40 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SUD50P04-08-GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 73.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 10 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is P-channel MOSFET 50 A 40 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SUD50P04-08-GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 73.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 10 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.